MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100)

被引：207
|
作者：
WANG, WI
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 12期
关键词：
D O I：
10.1063/1.94673
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1149 / 1151
页数：3
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