MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI

被引：83
|
作者：
CHYI, JI
BISWAS, D
IYER, SV
KUMAR, NS
MORKOC, H
BEAN, R
ZANIO, K
LEE, HY
CHEN, H
机构：
[1] FORD AEROSP & COMMUN CORP,NEWPORT BEACH,CA 92660
[2] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 11期
关键词：
D O I：
10.1063/1.100784
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1016 / 1018
页数：3
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