MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB

被引：50

作者：

MICHEL, E

SINGH, G

SLIVKEN, S

BESIKCI, C

BOVE, P

FERGUSON, I

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Northwestern University, Evanston

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 26期

关键词：

D O I：

10.1063/1.112384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report on the growth of high quality InSb by molecular beam epitaxy that has been optimized using reflection high energy electron diffraction. A 4.8 μm InSb layer grown on GaAs at a growth temperature of 395°C and a III/V incorporation ratio of 1:1.2 had an x-ray rocking curve of 158 arcsec and a Hall mobility of 92 300 cm2 V-1 at 77 K. This is the best material quality obtained for InSb nucleated directly onto GaAs reported to date. © 1994 American Institute of Physics.

引用

页码：3338 / 3340

页数：3

共 50 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB ON INP AND GAAS SUBSTRATES
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[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) : 3618 - 3621
[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB FOR P-I-N PHOTODETECTORS
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[3] HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES
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[5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 345 - 347
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF INSB ON SI
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (11) : 1016 - 1018
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INGAAS AND INALGAAS FILMS ON GAAS
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[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 191 - 197
[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INGAAS AND INALGAAS FILMS ON GAAS
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[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE-FILMS ON INSB
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[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS LAYER DIRECTLY ON GAP SUBSTRATE
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KANAYA, Y
PAK, K
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