GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY - GROWTH CONDITION DEPENDENCE AND ITS MECHANISM

被引：0
|
作者：
OKAMOTO, A [1 ]
OHATA, K [1 ]
机构：
[1] NEC CORP,MICROELECTR RES LAB,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：S13 / S13
页数：1
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