EPITAXIAL-GROWTH OF GASE FILMS BY MOLECULAR-BEAM EPITAXY ON GAAS(111), GAAS(001) AND GAAS(112) SUBSTRATES

被引：18
|
作者：
KOJIMA, N [1 ]
SATO, K [1 ]
YAMADA, A [1 ]
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
机构：
[1] TOKYO INST TECHNOL, DEPT ELECT & ELECTR ENGN, MEGURO KU, TOKYO 152, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10B期
关键词：
GASE; LAYERED COMPOUNDS; PHOTOLUMINESCENCE; III-VI COMPOUND SEMICONDUCTORS;
D O I：
10.1143/JJAP.33.L1482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have successfully grown epitaxial GaSe films on GaAs(111), (001) and (112) by molecular beam epitaxy. On the GaAs(111) substrate, the c-axis of the GaSe layer was perpendicular to the substrate surface, while each unit layer of GaSe was inclined on GaAs(001) and (112) substrates when the growth temperatures were higher than 500 degrees C at high beam fluxes of Ga and Se. Furthermore, we could detect strong photoluminescence (PL) emission from the GaSe films grown on GaAs(001) and (112) substrates. This result suggests that crystal quality was improved by growth through chemical bonding at a higher growth temperature.
引用
收藏
页码：L1482 / L1484
页数：3
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