SELECTIVE EPITAXIAL-GROWTH OF INAS ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：16

|

作者：

OKAMOTO, A

OHATA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1987年 / 26卷 / 07期

关键词：

D O I：

10.1143/JJAP.26.L1174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L1174 / L1176

页数：3

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