GROWTH CONDITION DEPENDENCE FOR GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY

被引：8

|

作者：

OKAMOTO, A

OHATA, K

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

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D O I：

10.1007/BF02657395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：111 / 115

页数：5

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