THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS/SI(100) - ASPECTS OF SUBSTRATE PREPARATION

被引：11
|
作者：
WOOLF, DA
WESTWOOD, DI
WILLIAMS, RH
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 12期
关键词：
D O I：
10.1088/0268-1242/4/12/014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1127 / 1134
页数：8
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