IMPROVED GAAS SUBSTRATE-TEMPERATURE MEASUREMENT DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：23
|
作者：
WRIGHT, SL [1 ]
MARKS, RF [1 ]
GOLDBERG, AE [1 ]
机构：
[1] IRCON INC,NILES,IL 60648
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期
关键词：
D O I：
10.1116/1.584351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：842 / 845
页数：4
相关论文
共 50 条
  • [1] SUBSTRATE-TEMPERATURE LOWERING IN GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 3413 - 3415
  • [2] LOW SUBSTRATE-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE CRITICAL LAYER THICKNESS OF INGAAS GROWN ON GAAS
    ELMAN, B
    KOTELES, ES
    MELMAN, P
    OSTREICHER, K
    SUNG, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2634 - 2640
  • [3] ROLE OF SUBSTRATE-TEMPERATURE IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-POWER GAAS/ALGAAS LASERS
    IYER, SV
    MEIER, HP
    OVADIA, S
    PARKS, C
    ARENT, DJ
    WALTER, W
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (04) : 416 - 418
  • [4] REPRODUCIBLE TEMPERATURE-MEASUREMENT OF GAAS SUBSTRATES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
    WRIGHT, SL
    MARKS, RF
    WANG, WI
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 505 - 506
  • [5] VARIATIONS IN SUBSTRATE-TEMPERATURE INDUCED BY MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATIVELY HEATED SUBSTRATES
    SHANABROOK, BV
    WATERMAN, JR
    DAVIS, JL
    WAGNER, RJ
    KATZER, DS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 994 - 997
  • [6] EFFECT OF SUBSTRATE-TEMPERATURE ON MOLECULAR-BEAM EPITAXIAL GAAS GROWTH USING AS-2
    ERICKSON, LP
    MATTORD, TJ
    CARPENTER, GL
    PALMBERG, PW
    PEARAH, PJ
    KLEIN, MV
    MORKOC, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2231 - 2235
  • [7] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 139 - 143
  • [8] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
  • [9] INFLUENCE OF SUBSTRATE-TEMPERATURE AND INAS MOLE FRACTION ON THE INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAS SINGLE QUANTUM WELLS ON GAAS
    RADULESCU, DC
    SCHAFF, WJ
    EASTMAN, LF
    BALLINGALL, JM
    RAMSEYER, GO
    HERSEE, SD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (01): : 111 - 115
  • [10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS (331)
    UPPAL, PN
    AHEARN, JS
    MUSSER, DP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 759 - 760
12345