REPRODUCIBLE TEMPERATURE-MEASUREMENT OF GAAS SUBSTRATES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：14

作者：

WRIGHT, SL

MARKS, RF

WANG, WI

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583410

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：505 / 506

页数：2

共 50 条

[1] IMPROVED GAAS SUBSTRATE-TEMPERATURE MEASUREMENT DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
WRIGHT, SL
MARKS, RF
GOLDBERG, AE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 842 - 845
[2] MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATION-HEATED GAAS SUBSTRATES
PALMATEER, SC
LEE, BR
HWANG, JCM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C467 - C467
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH AND INTERFACE CHARACTERISTICS OF GAASSB ON GAAS SUBSTRATES
YANO, M
ASHIDA, M
KAWAGUCHI, A
IWAI, Y
INOUE, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 199 - 203
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS (331)
UPPAL, PN
AHEARN, JS
MUSSER, DP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 759 - 760
[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331)
UPPAL, PN
AHEARN, JS
MUSSER, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3766 - 3771
[6] HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES
SMITH, JS
DERRY, PL
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 712 - 715
[7] DESORPTION OF TRIETHYLGALLIUM DURING METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS
UNETA, M
WATANABE, Y
OHMACHI, Y
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (23) : 2327 - 2329
[8] EPITAXIAL-GROWTH OF CDTE ON GAAS BY MOLECULAR-BEAM EPITAXY
KOLODZIEJSKI, LA
GUNSHOR, RL
OTSUKA, N
CHOI, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2150 - 2152
[9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NIAL ON GAAS(001)
CHAMBERS, SA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 737 - 741
[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON SI(211)
UPPAL, PN
KROEMER, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) : 2195 - 2203

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