ROLE OF SUBSTRATE-TEMPERATURE IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-POWER GAAS/ALGAAS LASERS

被引：19
|
作者：
IYER, SV [1 ]
MEIER, HP [1 ]
OVADIA, S [1 ]
PARKS, C [1 ]
ARENT, DJ [1 ]
WALTER, W [1 ]
机构：
[1] IBM CORP,DIV RES,CH-8803 RUSCHLIKON,SWITZERLAND
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期
关键词：
D O I：
10.1063/1.106620
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The growth of high-quality GaAs/AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers is shown to be critically dependent on growth temperature. The temperature-dependent nature of oxygen incorporation in the cladding and active regions and its effect on laser performance is investigated in detail. A model is presented that takes the incorporation, desorption, and accumulation of impurities in different regimes into account.
引用
收藏
页码：416 / 418
页数：3
相关论文
共 50 条
  • [1] SUBSTRATE-TEMPERATURE LOWERING IN GAAS SELECTIVE EPITAXIAL-GROWTH BY MOLECULAR-BEAM EPITAXY
    OKAMOTO, A
    OHATA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 3413 - 3415
  • [2] IMPROVED GAAS SUBSTRATE-TEMPERATURE MEASUREMENT DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
    WRIGHT, SL
    MARKS, RF
    GOLDBERG, AE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (03): : 842 - 845
  • [3] LOW SUBSTRATE-TEMPERATURE MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE CRITICAL LAYER THICKNESS OF INGAAS GROWN ON GAAS
    ELMAN, B
    KOTELES, ES
    MELMAN, P
    OSTREICHER, K
    SUNG, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2634 - 2640
  • [4] VARIATIONS IN SUBSTRATE-TEMPERATURE INDUCED BY MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATIVELY HEATED SUBSTRATES
    SHANABROOK, BV
    WATERMAN, JR
    DAVIS, JL
    WAGNER, RJ
    KATZER, DS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 994 - 997
  • [5] EFFECT OF SUBSTRATE-TEMPERATURE ON MOLECULAR-BEAM EPITAXIAL GAAS GROWTH USING AS-2
    ERICKSON, LP
    MATTORD, TJ
    CARPENTER, GL
    PALMBERG, PW
    PEARAH, PJ
    KLEIN, MV
    MORKOC, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2231 - 2235
  • [6] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    [J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 139 - 143
  • [7] EPITAXIAL-GROWTH OF ZNMGSSE ON GAAS SUBSTRATE BY MOLECULAR-BEAM EPITAXY
    OKUYAMA, H
    NAKANO, K
    MIYAJIMA, T
    AKIMOTO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1620 - L1623
  • [8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-PURITY ALGAAS
    CUNNINGHAM, JE
    TSANG, WT
    CHIU, TH
    SCHUBERT, EF
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 769 - 771
  • [9] RELIABLE SUBSTRATE-TEMPERATURE MEASUREMENTS FOR HIGH-TEMPERATURE ALGAAS MOLECULAR-BEAM EPITAXY GROWTH
    STRITE, S
    KAMP, M
    MEIER, HP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 290 - 292
  • [10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ERBIUM-DOPED GAAS AND ALGAAS
    EVANS, KR
    TAYLOR, EN
    STUTZ, CE
    ELSAESSER, DW
    COLON, JE
    YEO, YK
    HENGEHOLD, RL
    SOLOMON, JS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 870 - 872
12345