共 50 条
- [4] SN-DOPED GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J]. FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1979, 15 (04): : 121 - 130
- [5] STRUCTURE OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY [J]. ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1972, 32 (5-6): : 381 - &
- [6] GROWTH SPIRALS IN GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 233 - 238
- [7] BISTABLE DEFECTS IN GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (09): : 1044 - 1045
- [9] PHOTOLUMINESCENCE STUDY OF HEAVILY TE-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6A): : 2725 - 2730