A new recombination center in heavily doped GaAs : Zn grown by liquid-phase epitaxy

被引：0
|
作者：
Zhuravlev, KS [1 ]
Shamirzaev, TS [1 ]
Yakusheva, NA [1 ]
Petrenko, IP [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 10期
关键词：
D O I：
10.1134/1.1187565
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoluminescence properties of p-GaAs : Zn (100) layers grown by liquid-phase epitaxy from gallium and bismuth melts at various temperatures have been studied. It is shown that a novel radiative recombination center is formed in these layers. The concentration of the centers increases with the doping level in proportion to the concentration of free holes raised to the power 5.35 +/- 0.1. The exponent is independent of the growth melt (gallium or bismuth! and the growth temperature. It is found that the center is a neutral complex consisting of an antisite defect of gallium at an arsenic site and two arsenic vacancies. (C) 1998 American Institute of Physics. [S1063-7826(98)00810-2].
引用
收藏
页码：1057 / 1061
页数：5
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