user

MOSSBAUER-SPECTROSCOPY OF SN-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：8
|
作者：
WILLIAMSON, DL [1 ]
GIBART, P [1 ]
ELJANI, B [1 ]
NGUESSAN, K [1 ]
机构：
[1] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期
关键词：
D O I：
10.1063/1.339603
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1739 / 1744
页数：6
相关论文
共 50 条
  • [1] MOSSBAUER-SPECTROSCOPY OF SN-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
    WILLIAMSON, DL
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3466 - 3472
  • [2] PHOTOVOLTAIC STUDY OF THE SUBSTRATE-LAYER INTERFACE FOR SN-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    FORTIN, E
    CHARBONNEAU, S
    MEIKLE, S
    ROTH, AP
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1141 - 1144
  • [3] SN-DOPED INGAAS LAYERS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    EISENBACH, A
    KUPHAL, E
    MIETHE, K
    HARTNAGEL, HL
    [J]. JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 129 - 134
  • [4] ZN DELTA-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    LI, G
    LINNARSSON, M
    JAGADISH, C
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 154 (3-4) : 231 - 239
  • [5] Characterization of carbon-doped GaAs grown by metalorganic vapor-phase epitaxy
    Gong, YN
    Mo, JJ
    Yu, HS
    Wang, L
    Xia, GQ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) : 271 - 278
  • [6] LAYER QUALITY OF SB-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    YAKIMOVA, R
    PASKOVA, T
    IVANOV, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 129 (1-2) : 143 - 148
  • [7] CARBON-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TMAS AND TEG
    KOBAYASHI, T
    INOUE, N
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) : 183 - 186
  • [8] VAPOR-PHASE EPITAXIAL-GROWTH OF SN-DOPED GAAS
    SANKARAN, R
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 797 - 799
  • [9] THERMOELASTIC STRAIN IN ZNSE FILMS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    SHIBATA, N
    OHKI, A
    ZEMBUTSU, S
    KATSUI, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04): : L487 - L489
  • [10] MICROSTRUCTURES OF (IN,GA)P ALLOYS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    FOLLSTAEDT, DM
    SCHNEIDER, RP
    JONES, ED
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3077 - 3087
12345