BISTABLE DEFECTS IN GAAS GROWN BY LIQUID-PHASE EPITAXY

被引:0
|
作者
BRUNKOV, PN
KONNIKOV, SG
PAPENTSEV, MI
SOBOLEV, MM
STEPANOVA, MN
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 09期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
下载
收藏
页码:1044 / 1045
页数:2
相关论文
共 50 条
  • [1] STRUCTURE OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXY
    GROBE, E
    SALOW, H
    ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1972, 32 (5-6): : 381 - &
  • [2] GROWTH SPIRALS IN GAAS GROWN BY LIQUID-PHASE EPITAXY
    KIMURA, C
    YANAKI, T
    HOSHINO, H
    JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 233 - 238
  • [3] PROPERTIES OF GAAS-V GROWN BY LIQUID-PHASE EPITAXY
    BALASUBRAMANIAN, S
    KUMAR, V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) : 1117 - 1118
  • [4] INFLUENCE OF OXYGEN ON PROPERTIES OF GAAS GROWN BY LIQUID-PHASE EPITAXY
    OTSUBO, M
    SEGAWA, K
    MIKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (06) : 797 - 803
  • [5] GaAs pyramidal microtips grown by selective liquid-phase epitaxy
    Hu, LZ
    Zhang, HZ
    Wang, ZJ
    Sun, J
    Zhao, Y
    Liang, XP
    JOURNAL OF CRYSTAL GROWTH, 2004, 271 (1-2) : 46 - 49
  • [6] SHALLOW ACCEPTOR LUMINESCENCE IN GAAS GROWN BY LIQUID-PHASE EPITAXY
    BRANTLEY, WA
    QUEISSER, HJ
    HWANG, CJ
    DAWSON, LR
    SOLID STATE COMMUNICATIONS, 1972, 10 (12) : 1141 - &
  • [7] Characterization of GaAs liquid-phase epitaxy layers grown in a BN boat
    Prutskij, TA
    Ilinskii, AI
    Andrade, FS
    Chavez, F
    Arencibia, PD
    JOURNAL OF CRYSTAL GROWTH, 1997, 178 (03) : 233 - 241
  • [8] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
    KRESSEL, H
    DUNSE, JU
    NELSON, H
    HAWRYLO, FZ
    JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &
  • [9] ELECTRON TRAPS IN GAAS-SB GROWN BY LIQUID-PHASE EPITAXY
    DHAR, S
    MALLIK, K
    MAZUMDAR, M
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1531 - 1535
  • [10] LIQUID-PHASE EPITAXY OF GAAS AND ALGAAS
    PEEV, NS
    JOURNAL OF CRYSTAL GROWTH, 1989, 98 (03) : 499 - 503