Characterization of GaAs liquid-phase epitaxy layers grown in a BN boat

被引：0

作者：

Prutskij, TA ^{[1
]}

Ilinskii, AI ^{[1
]}

Andrade, FS ^{[1
]}

Chavez, F ^{[1
]}

Arencibia, PD ^{[1
]}

机构：

[1] UNIV LA HABANA,FAC PHYS,HAVANA,CUBA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 178卷 / 03期

关键词：

D O I：

10.1016/S0022-0248(96)01196-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAs liquid-phase epitaxy layers were grown in a BN boat using the melt-baking growth technique. Free-carrier concentration and mobility, photoluminescence at 11.5 K and electrooptical properties were studied to determine the quality of the layers. All the layers grown using this BN boat have a p-i-n structure possibly formed by the presence of nitrogen and silicon impurities.

引用

页码：233 / 241

页数：9

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