PLANAR, ION-IMPLANTED, HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES

被引：16
|
作者：
SHENOY, PM
BALIGA, BJ
机构：
[1] Power Semiconductor Research Center, North Carolina State University, Raleigh
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 10期
关键词：
D O I：
10.1109/55.464815
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Planar, high voltage (800 V) P-N junction diodes have been fabricated for the first time on N-type 6H-SiC by room temperature boron implantation through a pad oxide deposited within windows etched in an LPCVD field oxide. All the diodes showed excellent rectification with leakage currents of less than 10 nA (similar to 5 x 10(-5) A/cm(2)) until avalanche breakdown. It was found that the breakdown voltage increases nifh junction depth. The reverse recovery time (t(rr)) was measured to be 50 ns for the 800 V diode from which an effective minority carrier life time of 12.5 ns was extracted.
引用
收藏
页码：454 / 456
页数：3
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