Quantitative carrier profiling in ion-implanted 6H-SiC

被引：43
|
作者：
Giannazzo, F
Calcagno, L
Raineri, V
Ciampolini, L
Ciappa, M
Napolitani, E
机构：
[1] Catania Univ, INFM, I-95127 Catania, Italy
[2] Catania Univ, Dipartimento Fis, I-95127 Catania, Italy
[3] CNR, IMETEM, I-95121 Catania, Italy
[4] Swiss Fed Inst Technol, Swiss Fed Inst Technol, Integrated Syst Lab IIS, Zurich, Switzerland
[5] Univ Padua, INFM, I-35131 Padua, Italy
[6] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期
关键词：
D O I：
10.1063/1.1394956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Dopant profiles in n-type 6H-SiC samples implanted with N+ ions have been measured by scanning capacitance microscopy on cross-sectioned samples. The obtained carrier profiles have been accurately quantified by calculating a complete set of capacitance-to-voltage curves by simulation of the measurement setup, followed by the extraction of the system response characteristic as a function of the local carrier concentration. The discrepancy observed to occur between the scanning capacitance microscopy data and the corresponding secondary ions mass spectroscopy profiles is explained by the fact that the scanning capacitance microscopy is sensitive on the local concentration of free carriers, which is on the local concentration of electrically activated dopant ions. (C) 2001 American Institute of Physics.
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页码：1211 / 1213
页数：3
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