EVALUATION OF AL ION-IMPLANTED 6H-SIC SINGLE-CRYSTALS

被引：11

作者：

NAKATA, T ^{[1
]}

MIZUTANI, Y ^{[1
]}

MIKODA, M ^{[1
]}

WATANABE, M ^{[1
]}

TAKAGI, T ^{[1
]}

NISHINO, S ^{[1
]}

机构：

[1] KYOTO INST TECHNOL,SAKYO KU,KYOTO 606,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 74卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(93)95029-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have focused on the fundamental effect of Al implantation on 6H-SiC. Aluminum ions were implanted at 330 keV into 6H-SiC substrates at room temperature. Implanted samples were annealed in a temperature range from 1000 to 1500-degrees-C in an SiC crucible with an argon atmosphere using rf heating. The implanted samples were evaluated by several means such as optical transmission. SIMS, Raman, and RBS spectroscopy together with electrical measurements. The optical transmission of the sample at a wavelength of 500 nm before and after ion implantation (ion dose: 2 x 10(15) cm-2) were 65 and 3% respectively, where a substrate thickness of 300 mum was used. After annealing at 1000-degrees-C for 40 min, the transmittance recovered up to 33%. By RBS measurement, the implanted damage still remained after annealing at 1500-degrees-C for 40 min. Sheet resistance was also measured at various annealing temperatures.

引用

页码：131 / 133

页数：3

共 50 条

[1] Optical evaluation of 6H-SiC single crystals implanted with B or Al
Toda, T
Yagi, K
Koga, K
Yodoshi, K
Niina, T
[J]. SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 545 - 548
[2] Quantitative carrier profiling in ion-implanted 6H-SiC
Giannazzo, F
Calcagno, L
Raineri, V
Ciampolini, L
Ciappa, M
Napolitani, E
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (08) : 1211 - 1213
[3] Defect accumulation and recovery in ion-implanted 6H-SiC
Jiang, W
Weber, WJ
Wang, CM
[J]. DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 319 - 324
[4] Role of implantation temperature on residual damage in ion-implanted 6H-SiC
Héliou, R
Brebner, JL
Roorda, S
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (10) : 836 - 843
[5] OPTICAL-CONSTANTS OF 6H-SIC SINGLE-CRYSTALS
NINOMIYA, S
ADACHI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (5A): : 2479 - 2482
[6] Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC
Costa, A. R. G.
Wahl, U.
Correia, J. G.
David-Bosne, E.
Amorim, L. M.
Augustyns, V.
Silva, D. J.
da Silva, M. R.
Pereira, L. M. C.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (01)
[7] Structural and optical studies on ion-implanted 6H-SiC thin films
Feng, Z. C.
Lien, S. C.
Zhao, J. H.
Sun, X. W.
Lu, W.
[J]. THIN SOLID FILMS, 2008, 516 (16) : 5217 - 5222
[8] ENHANCED OXIDATION OF ION-IMPLANTED SI-FACE OF 6H-SIC
UENO, K
SEKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1121 - L1123
[9] 2.5 kV ion-implanted p(+)n diodes in 6H-SiC
Rottner, KH
Schoner, A
Savage, SM
Frischholz, M
Hallin, C
Kordina, O
Janzen, E
[J]. DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1485 - 1488
[10] Structural and electrical characterization of n+-type ion-implanted 6H-SiC
Goghero, D
Giannazzo, F
Raineri, V
Musumeci, P
Calcagno, L
[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 239 - 242

← 1 2 3 4 5 →