EVALUATION OF AL ION-IMPLANTED 6H-SIC SINGLE-CRYSTALS

We have focused on the fundamental effect of Al implantation on 6H-SiC. Aluminum ions were implanted at 330 keV into 6H-SiC substrates at room temperature. Implanted samples were annealed in a temperature range from 1000 to 1500-degrees-C in an SiC crucible with an argon atmosphere using rf heating. The implanted samples were evaluated by several means such as optical transmission. SIMS, Raman, and RBS spectroscopy together with electrical measurements. The optical transmission of the sample at a wavelength of 500 nm before and after ion implantation (ion dose: 2 x 10(15) cm-2) were 65 and 3% respectively, where a substrate thickness of 300 mum was used. After annealing at 1000-degrees-C for 40 min, the transmittance recovered up to 33%. By RBS measurement, the implanted damage still remained after annealing at 1500-degrees-C for 40 min. Sheet resistance was also measured at various annealing temperatures.