Quantitative carrier profiling in ion-implanted 6H-SiC

Dopant profiles in n-type 6H-SiC samples implanted with N+ ions have been measured by scanning capacitance microscopy on cross-sectioned samples. The obtained carrier profiles have been accurately quantified by calculating a complete set of capacitance-to-voltage curves by simulation of the measurement setup, followed by the extraction of the system response characteristic as a function of the local carrier concentration. The discrepancy observed to occur between the scanning capacitance microscopy data and the corresponding secondary ions mass spectroscopy profiles is explained by the fact that the scanning capacitance microscopy is sensitive on the local concentration of free carriers, which is on the local concentration of electrically activated dopant ions. (C) 2001 American Institute of Physics.