Planar, high voltage, boron implanted 6H-SiC P-N junction diodes

被引：0
|
作者：
Shenoy, PM
Baliga, BJ
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High voltage (800V) planar P-N junction diodes have been fabricated on N-type 6H-SiC by room temperature boron implantation for the first time. The diodes had excellent reverse blocking characteristics with leakage currents of less than 5x10(-5)A/cm(2) and sharp avalanche breakdown. It was found that the breakdown voltage increases with junction depth and the experimentally measured breakdown voltages are in good agreement with the simulation results. The reverse recovery time (t(rr)) was measured to be 50 ns for the 800V diode from which a minority carrier lifetime (tau(p)) of 12.5 ns was extracted.
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页码：717 / 720
页数：4
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