BORON-IMPLANTED 6H-SIC DIODES

被引：49
|
作者：
GHEZZO, M [1 ]
BROWN, DM [1 ]
DOWNEY, E [1 ]
KRETCHMER, J [1 ]
KOPANSKI, JJ [1 ]
机构：
[1] NATL INST STAND & TECHNOL, GAITHERSBURG, MD 20899 USA
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期
关键词：
D O I：
10.1063/1.109772
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ion implanted planar p-n junctions are important for silicon carbide discrete devices and integrated circuits. Conversion to p-type of n-type 6H-SiC was observed for the first time using boron implantation. Diodes were fabricated with boron implants at 25 and 1000-degrees-C, followed by 1300-degrees-C post-implant annealing in a furnace. The best diodes measured at 21-degrees-C exhibited an ideality factor of 1.77, reverse bias leakage of 10(-10) A/cm2 at -10 V, and a record high (for a SiC-implanted diode) breakdown voltage of -650 V.
引用
收藏
页码：1206 / 1208
页数：3
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