Nitrogen implanted high voltage, planar, 6H-SiC N+-P junction diodes

被引：5
|
作者：
Alok, D [1 ]
Baliga, BJ [1 ]
机构：
[1] N CAROLINA STATE UNIV,POWER SEMICOND RES CTR,RALEIGH,NC 27695
来源：
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/ISPSD.1996.509459
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：107 / 110
页数：4
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