HIGH-VOLTAGE 6H-SIC P-N-JUNCTION DIODES

被引：55

作者：

MATUS, LG ^{[1
]}

POWELL, JA ^{[1
]}

SALUPO, CS ^{[1
]}

机构：

[1] CALSPAN CORP,MIDDLEBURG HTS,OH 44130

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 14期

关键词：

D O I：

10.1063/1.106195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600-degrees-C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

引用

页码：1770 / 1772

页数：3

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