FABRICATION OF P-N-JUNCTION DIODES USING HOMOEPITAXIALLY GROWN 6H-SIC AT LOW-TEMPERATURE BY CHEMICAL VAPOR-DEPOSITION

被引：47
|
作者：
SHIBAHARA, K
KURODA, N
NISHINO, S
MATSUNAMI, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1987年 / 26卷 / 11期
关键词：
D O I：
10.1143/JJAP.26.L1815
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1815 / L1817
页数：3
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