2000-V 6H-SIC P-N-JUNCTION DIODES GROWN BY CHEMICAL-VAPOR-DEPOSITION

In this letter we report on the fabrication and initial electrical characterization of the first silicon carbide diodes to demonstrate rectification to reverse voltages in excess of 2000 V at room temperature. The mesa structured 6H-SiC p + n junction diodes were fabricated in 6H-SiC epilayers grown by atmospheric pressure chemical vapor deposition on commercially available 6H-SiC wafers. The devices were characterized while immersed in Fluorinert(TM) to prevent arcing which occurs when air breaks down under high electric fields. The simple nonoptimized diodes, whose device areas ranged from 7 x 10(-6) to 4 x 10(-4) cm2, exhibited a 2000 V functional device yield in excess of 50%.