EFFECT OF AS OVERPRESSURE DURING ANNEALING ON THE NONUNIFORMITY OF ACTIVATION EFFICIENCY IN SI-IMPLANTED GAAS LAYER

被引：4
|
作者：
SATO, T [1 ]
TAJIMA, M [1 ]
ISHIDA, K [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期
关键词：
D O I：
10.1063/1.98857
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：755 / 757
页数：3
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