SI FILM AS AN ANNEALING CAP FOR SI-IMPLANTED GAAS

被引：12
|
作者：
SHIM, TE
ITOH, T
YAMAMOTO, Y
SUZUKI, S
机构：
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN
[2] ADV MAT LAB INC,SAITAMA 340,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 10期
关键词：
D O I：
10.1063/1.96730
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：641 / 643
页数：3
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