RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS

被引：14
|
作者：
ITO, K
YOSHIDA, M
OTSUBO, M
MUROTANI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 05期
关键词：
D O I：
10.1143/JJAP.22.L299
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L299 / L300
页数：2
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