PULSE LASER ANNEALING EFFECTS IN SI-IMPLANTED GAAS

被引：10
|
作者：
ORABY, AH [1 ]
YUBA, Y [1 ]
TAKAI, M [1 ]
GAMO, K [1 ]
NAMBA, S [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 03期
关键词：
D O I：
10.1143/JJAP.23.326
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：326 / 330
页数：5
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