RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS WITH TRIMETHYLARSENIC OVERPRESSURE

被引：21

|

作者：

REYNOLDS, S

VOOK, DW

OPYD, WG

GIBBONS, JF

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.98800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：916 / 918

页数：3

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