共 50 条
- [1] DISORDERING OF SI-IMPLANTED GAAS-ALGAAS SUPERLATTICES BY RAPID THERMAL ANNEALING ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 489 - 494
- [2] COMPOSITIONAL DISORDERING OF SI-IMPLANTED GAAS ALGAAS SUPERLATTICES BY RAPID THERMAL ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1407 - L1409
- [4] COMPOSITIONAL DISORDERING OF Si-IMPLANTED GaAs/AlGaAs SUPERLATTICES BY RAPID THERMAL ANNEALING. Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (08): : 1407 - 1409
- [5] Si diffusion in compositional disordering of Si-implanted GaAs/AlGaAs superlattices induced by rapid thermal annealing Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (09): : 1734 - 1735
- [6] SI DIFFUSION IN COMPOSITIONAL DISORDERING OF SI-IMPLANTED GAAS/ALGAAS SUPERLATTICES INDUCED BY RAPID THERMAL ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1734 - L1735
- [7] DISORDERING OF SURFACE REGIONS IN SI-IMPLANTED SUPERLATTICES OF GAAS/ALGAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1122 - L1124
- [8] COMPOSITIONAL DISORDERING OF FOCUSED-SI-IMPLANTED GAAS/ALGAAS SUPERLATTICES BY RAPID THERMAL ANNEALING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L2101 - L2103
- [10] COMPOSITIONAL DISORDERING OF FOCUSED-Si-IMPLANTED GaAs/AlGaAs SUPERLATTICES BY RAPID THERMAL ANNEALING. Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (12): : 2101 - 2103