STUDY OF ENCAPSULANTS FOR ANNEALING SI-IMPLANTED GAAS

被引：41
|
作者：
ONUMA, T
HIRAO, T
SUGAWA, T
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 04期
关键词：
D O I：
10.1149/1.2123983
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：837 / 840
页数：4
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