RADIATION ANNEALING OF SI-IMPLANTED AND S-IMPLANTED GAAS

被引：14

|

作者：

ITO, K

YOSHIDA, M

OTSUBO, M

MUROTANI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 05期

关键词：

D O I：

10.1143/JJAP.22.L299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L299 / L300

页数：2

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