共 50 条
- [31] EFFECT OF AS OVERPRESSURE DURING ANNEALING ON THE NONUNIFORMITY OF ACTIVATION EFFICIENCY IN SI-IMPLANTED GAAS LAYER[J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 755 - 757SATO, TTAJIMA, MISHIDA, K
- [32] DOPANT INCORPORATION IN SI-IMPLANTED AND THERMALLY ANNEALED GAAS[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 1779 - 1783WAGNER, JSEELEWIND, HJANTZ, W
- [33] ELECTRICAL CHARACTERISTICS OF MEV SI-IMPLANTED AND ANNEALED GAAS[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 71 (04): : 392 - 398SEN, SBURTON, LC
- [34] DAMAGE AND LATTICE LOCATION STUDIES OF SI-IMPLANTED GAAS[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 890 - 892BHATTACHARYA, RSPRONKO, PP
- [35] SUCCESSIVE TEM OBSERVATION OF DEFECTS IN SI-IMPLANTED GAAS[J]. MATERIALS LETTERS, 1987, 5 (7-8) : 255 - 257LIN, TLJIN, CJIN, NY
- [36] Simulation of uphill diffusion behaviour of Si-implanted GaAs[J]. MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1996, 4 (06) : 613 - 621Lo, VCSun, JZ
- [37] SI DIFFUSION IN COMPOSITIONAL DISORDERING OF SI-IMPLANTED GAAS/ALGAAS SUPERLATTICES INDUCED BY RAPID THERMAL ANNEALING[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1734 - L1735UEMATSU, MYANAGAWA, F
- [38] COIMPLANTATION AND AUTOCOMPENSATION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS-CR[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 79 - 85FARLEY, CWKIM, TSSTREETMAN, BG
- [39] LUMINESCENCE STUDY OF RAPID LAMP ANNEALING OF SI-IMPLANTED INP[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 531 - 536KIRILLOV, DMERZ, JLKALISH, RSHATAS, S
- [40] PLASMA DEPOSITED SILICON-NITRIDE ENCAPSULANT FOR RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (03): : 402 - 406LEE, SGOPINATH, A