共 50 条
- [31] OPTICAL DETECTION OF BE ION-IMPLANTATION DAMAGE IN GAAS [J]. REPORT OF NRL PROGRESS, 1975, (MAR): : 21 - 24
- [32] GAAS HALL ELEMENT FABRICATED BY ION-IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1188 - 1192
- [34] SI ION-IMPLANTATION FOR GAAS IC FABRICATION [J]. REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1985, 33 (01): : 130 - 135
- [35] ION-IMPLANTATION OF BORON IN GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 126 - 128
- [36] ION-IMPLANTATION INDUCED DISPLACEMENT OF GA AND AS IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 195 - 197
- [37] DEFECT DIFFUSION DURING ION-IMPLANTATION INTO GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : K197 - K201
- [38] ION-IMPLANTATION OF ZN, SE AND CD IN BP CRYSTALS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 45 - 49
- [40] AMORPHOUS-LAYER FORMATION IN GAAS BY ION-IMPLANTATION [J]. ELECTRONICS LETTERS, 1978, 14 (21) : 695 - 696