INVESTIGATION OF ION-IMPLANTED GAAS FOLLOWING ELECTRON-BEAM ANNEALING

被引：0
|
作者：
SHAHID, MA
MOFFATT, S
BARRETT, NJ
SEALY, BJ
机构：
[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
[2] UNIV SURREY, DEPT PHYS, GUILDFORD GU2 5XH, SURREY, ENGLAND
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 67期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：131 / 136
页数：6
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