ELECTRON-BEAM ANNEALING OF ION-IMPLANTED AL

被引：7
|
作者：
WAMPLER, WR
FOLLSTAEDT, DM
PICRAUX, ST
机构：
来源：
APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 05期
关键词：
D O I：
10.1063/1.91489
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：366 / 368
页数：3
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