CONTINUOUS ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON

被引：0
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作者：
BUDISHEVSKY, VS
GROTZSCHEL, R
KAGADEI, VA
LEBEDEVA, NI
PROSKUROVSKY, DI
YANKELEVICH, EB
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来源：
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS | 1988年 / 8卷
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T [工业技术];
学科分类号：
08 ;
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页码：262 / 264
页数：3
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