CONTINUOUS ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON

被引：0

作者：

BUDISHEVSKY, VS

GROTZSCHEL, R

KAGADEI, VA

LEBEDEVA, NI

PROSKUROVSKY, DI

YANKELEVICH, EB

机构：

来源：

EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS | 1988年 / 8卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：262 / 264

页数：3

共 50 条

[21] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON-BEAM SYSTEM
DORI, L
IMPRONTA, M
LULLI, G
MERLI, PG
SEVERI, M
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 415 - 419
[22] THERMOELASTIC STRESS-ANALYSIS OF PULSED ELECTRON-BEAM RECRYSTALLIZATION OF ION-IMPLANTED SILICON
SCHOEN, NC
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4747 - 4751
[23] IN-SITU DETECTION OF REARRANGEMENT PROCESSES DURING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED INP
MAURER, C
KALLWEIT, R
BAUMANN, H
BETHGE, K
KRIMMEL, EF
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 564 - 568
[24] PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON
LITTLE, RG
GREENWALD, AG
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1031 - 1032
[25] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED GAAS
ALBERTS, HW
GAIGHER, HL
FRIEDLAND, E
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 331 - 335
[26] PULSED ELECTRON-BEAMS FOR ANNEALING OF ION-IMPLANTED SILICON
LITTLE, RG
GREENWALD, AC
MINNUCCI, JA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1683 - 1685
[27] LASER ANNEALING OF ION-IMPLANTED SILICON
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 264 - 265
[28] LASER ANNEALING OF ION-IMPLANTED SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C384 - C384
[29] SOLID-STATE ANNEALING OF ION-IMPLANTED SILICON BY INCOHERENT-LIGHT PULSES AND MULTI-SCAN ELECTRON-BEAM
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 125 - 131
[30] LASER ANNEALING OF ION-IMPLANTED SILICON
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (02) : 1759 - 1762

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