PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED GAAS

被引：6
|
作者：
ALBERTS, HW
GAIGHER, HL
FRIEDLAND, E
机构：
[1] Department of Physics, University of Pretoria, Pretoria
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期
关键词：
D O I：
10.1016/0921-5107(91)90196-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The annealing of ion-implanted damage in GaAs single crystals has been studied as a function of pulsed-electron-beam energy densities. The single crystals were implanted with 150 keV Cr+ ions at doses ranging from 1 x 10(12) to 5 x 10(15) ions cm-2 as well as with Si+ ions at a dose of 1 x 10(16) ions cm-2. The radiation damage before and after annealing was analysed with backscattering and channelling of 1.5 MeV He+ beams in conjunction with transmission electron microscopy.
引用
收藏
页码：331 / 335
页数：5
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