TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING

被引：0
|
作者：
GAIGHER, HL
ALBERTS, HW
机构：
[1] Department of Physics, University of Pretoria
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 125卷 / 04期
关键词：
PULSED ELECTRON BEAM ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; GAAS;
D O I：
10.1080/10420159308220214
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
(001) GaAs single crystals were implanted with 150 keV Cr+ ions using a dose of 5 x 10(15) ions cm-2 The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0-1.3 J cm-2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.
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页码：373 / 380
页数：8
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