RADIO-FREQUENCY REACTIVE SPUTTER ETCHING CONTROL OF ETCH RATES

被引：5

作者：

HORWITZ, CM ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：840 / 843

页数：4

共 50 条

[1] REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATES
HORWITZ, CM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1320 - 1323
[2] MICROSTRUCTURING OF PHOTOMASKS BY A NON-REACTIVE RADIO-FREQUENCY ION ETCHING
SPANGENBERG, B
GORANCHEV, BG
ORLINOV, VI
JELEV, JG
[J]. THIN SOLID FILMS, 1982, 87 (04) : 313 - 322
[3] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING
LEHMANN, HW
WIDMER, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326
[4] RADIO-FREQUENCY SPUTTER DEPOSITION OF ALLOY-FILMS
HIEBER, K
[J]. SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1982, 11 (03): : 145 - 148
[5] Distinct processes in radio-frequency reactive magnetron plasma sputter deposition of silicon suboxide films
van Hattum, E. D.
Palmero, A.
Arnoldbik, W. M.
Rudolph, H.
Habraken, F. H. P. M.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)
[6] RF SPUTTER ETCHING - A UNIVERSAL ETCH
DAVIDSE, PD
[J]. VACUUM, 1967, 17 (03) : 165 - &
[7] RF SPUTTER ETCHING - A UNIVERSAL ETCH
DAVIDSE, PD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 100 - &
[8] RF SPUTTER ETCHING - A UNIVERSAL ETCH
DAVIDSE, PD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1966, 3 (05): : 303 - &
[9] RADIO-FREQUENCY SPUTTER DEPOSITED BORON-NITRIDE FILMS
WIGGINS, MD
AITA, CR
HICKERNELL, FS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 322 - 325
[10] REACTIVE ION ETCHING OF SPUTTER DEPOSITED TANTALUM OXIDE AND ITS ETCH SELECTIVITY TO TANTALUM
KUO, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (02) : 579 - 583

← 1 2 3 4 5 →