Self-Heating Effect in Submicronic SOI-CMOS Transistors

被引：2
|
作者：
Rumyantsev S.V. [1 ]
Novoselov A.S. [1 ]
Masalsky N.V. [1 ]
机构：
[1] Scientific Research Institute for System Analysis, Russian Academy of Sciences, Moscow
来源：
Russian Microelectronics | 2021年 / 50卷 / 04期
关键词：
high-temperature electronics; self-heating; silicon-on-insulator technology; simulation; SOI MOS transistor;
D O I：
10.1134/S1063739721030070
中图分类号：
学科分类号：
摘要：
Abstract: The results of a study of the contribution of the self-heating mechanism to the current-voltage characteristics of partially depleted SOI MOS transistors with topological norms of 0.25, 0.35, and 0.5 microns at high control voltages and temperatures of 25 and 300°C are discussed. It is shown that the action of this mechanism significantly changes the current-voltage characteristics of all the investigated types of transistors. The differences in the effect of the self-heating mechanism on the characteristics of n- and p-type transistors for the analyzed technological standards are determined. © 2021, Pleiades Publishing, Ltd.
引用
收藏
页码：278 / 285
页数：7
相关论文
共 50 条
  • [41] Simulation study of reduced self-heating in novel thin-SOI vertical bipolar transistors
    Ouyang, QQ
    Xiu, K
    [J]. SISPAD: 2005 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2005, : 55 - 58
  • [42] A high frequency PWM controller in HVBi-CMOS process considering SOI self-heating
    Singh, Gautam Kumar
    Panigrahi, Santosh Kumar
    [J]. ISQED 2007: PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2007, : 392 - +
  • [43] Investigation on Self-Heating Effect in Carbon Nanotube Field-Effect Transistors
    Xing, Chuan-Jia
    Yin, Wen-Yan
    Liu, Lei-Tao
    Huang, Jun
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (02) : 523 - 529
  • [44] The role of the source and drain contacts on self-heating effect in nanowire transistors
    D. Vasileska
    A. Hossain
    K. Raleva
    S. M. Goodnick
    [J]. Journal of Computational Electronics, 2010, 9 : 180 - 186
  • [45] Layout Design Correlated With Self-Heating Effect in Stacked Nanosheet Transistors
    Cai, Linlin
    Chen, Wangyong
    Du, Gang
    Zhang, Xing
    Liu, Xiaoyan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (06) : 2647 - 2653
  • [46] The role of the source and drain contacts on self-heating effect in nanowire transistors
    Vasileska, D.
    Hossain, A.
    Raleva, K.
    Goodnick, S.M.
    [J]. Journal of Computational Electronics, 2009, 8 (3-4) : 180 - 186
  • [47] Self-Heating Effects from Transistors to Gates
    van Santen, Victor M.
    Schillinger, Linda
    Amrouch, Hussam
    [J]. 2021 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), 2021,
  • [48] Characterization and Modeling of Self-Heating in DMOS Transistors
    Pfost, Martin
    [J]. 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 2014, : 3 - 10
  • [49] Modeling Self-Heating Effects in Nanoscale SOI Devices
    Vasileska, D.
    Goodnick, S. M.
    Raleva, K.
    [J]. 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
  • [50] The Role of the Source and Drain Contacts on Self-Heating Effect in Nanowire Transistors
    Vasileska, D.
    Hossain, A.
    Raleva, K.
    Goodnick, S. M.
    [J]. MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010, 2010, 31 (01): : 83 - 90
12345