The Role of the Source and Drain Contacts on Self-Heating Effect in Nanowire Transistors

被引：3

作者：

Vasileska, D. ^{[1
]}

Hossain, A. ^{[2
]}

Raleva, K. ^{[3
]}

Goodnick, S. M. ^{[1
]}

机构：

[1] Arizona State Univ, Dept ECEE, Tempe, AZ 85287 USA

[2] Intel Corp, Chandler, AZ USA

[3] Univ Sts Cyril & Methodi, Dept EI, Skopje, Macedonia

来源：

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2010 | 2010年 / 31卷 / 01期

基金：

美国国家科学基金会;

关键词：

SILICON; DEVICES;

D O I：

10.1149/1.3474145

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for V-G=V-D=1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.

引用

页码：83 / 90

页数：8

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