The role of the source and drain contacts on self-heating effect in nanowire transistors

被引：0
|
作者：
D. Vasileska
A. Hossain
K. Raleva
S. M. Goodnick
机构：
[1] Arizona State University,Department of ECEE
[2] Intel Corp.,Department of EI
[3] Univ. Sts. Cyril and Methodi,undefined
来源：
Journal of Computational Electronics | 2010年 / 9卷
关键词：
Analytic bands MC device modeling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We find that self-heating effects are not pronounced in silicon nanowire transistors with channel length 10 nm even in the presence of the wrap-around oxide. We observe a maximum current degradation of 6% for VG=VD=1.0 V in a structure in which the metal gates are far away from the channel. The overall small current degradation is attributed to the significant velocity overshoot effect in these structures. The lattice temperature profile shows moderate temperature rise and velocity of the carriers is slightly deteriorated due to self-heating effects when compared to isothermal simulations.
引用
收藏
页码：180 / 186
页数：6
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