A high frequency PWM controller in HVBi-CMOS process considering SOI self-heating

被引：0
|
作者：
Singh, Gautam Kumar [1 ]
Panigrahi, Santosh Kumar [1 ]
机构：
[1] Pulsecore Semiconductor Pvt Ltd, Bangalore, Karnataka, India
来源：
ISQED 2007: PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A companion analysis of self-heating effect (SHE) in HV-BiCMOS SOI, degradation of circuit performance and impact on long term reliability because of SHE is presented Band-gap voltage and output impedance degradation due to SOI self-heating are discussed. Also an efficient scheme for designing long term reliable pulse width modulation (PWM) controller has been discussed along with silicon and reliability test results.
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页码：392 / +
页数：2
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