Self-Heating Effect in Submicronic SOI-CMOS Transistors

被引：2
|
作者：
Rumyantsev S.V. [1 ]
Novoselov A.S. [1 ]
Masalsky N.V. [1 ]
机构：
[1] Scientific Research Institute for System Analysis, Russian Academy of Sciences, Moscow
来源：
Russian Microelectronics | 2021年 / 50卷 / 4期
关键词：
high-temperature electronics; self-heating; silicon-on-insulator technology; simulation; SOI MOS transistor;
D O I：
10.1134/S1063739721030070
中图分类号：
学科分类号：
摘要：
Abstract: The results of a study of the contribution of the self-heating mechanism to the current-voltage characteristics of partially depleted SOI MOS transistors with topological norms of 0.25, 0.35, and 0.5 microns at high control voltages and temperatures of 25 and 300°C are discussed. It is shown that the action of this mechanism significantly changes the current-voltage characteristics of all the investigated types of transistors. The differences in the effect of the self-heating mechanism on the characteristics of n- and p-type transistors for the analyzed technological standards are determined. © 2021, Pleiades Publishing, Ltd.
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页码：278 / 285
页数：7
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