Study of the Effect of Self-Heating in High-Voltage SOI Transistors with a Large Drift Region

被引：0
|
作者：
Rumyantsev S.V. [1 ]
Novoselov A.S. [1 ]
Masalsky N.V. [1 ]
机构：
[1] Scientific Research Institute for System Analysis, Russian Academy of Sciences, Moscow
来源：
Russian Microelectronics | 2022年 / 51卷 / 05期
关键词：
powerful LDMOS; self-heating; silicon-on-insulator technology; simulation; testing;
D O I：
10.1134/S1063739722050080
中图分类号：
学科分类号：
摘要：
Abstract: The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor) transistors made according to the silicon-on-insulator technology with a long drift region with topological norms of 0.5 microns at high control voltages are discussed. It is shown that the action of this mechanism significantly changes the CVC of n- and p-type transistors. Differences in the influence of the self-heating mechanism on the characteristics of transistors of the n- and p-type are determined. The results obtained also open up new opportunities for improving the characteristics of microcircuits during their development and methods for further improvement of the LDMOS technology. © 2022, Pleiades Publishing, Ltd.
引用
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页码：325 / 333
页数：8
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