Performance Analysis of HfO2-SiO2 Stacked Oxide Quadruple Gate Tunnel Field Effect Transistor for Improved ON Current

In this paper, the use of hetero-dielectric in quadruple gate Tunnel Field Effect Transistor (QG-TFET) is proposed to simultaneously improve the ON current and the ON-OFF ratio. The analytical models for the surface potential and the electric field for the QG-TFET are obtained by solving 2D-Poisson equations with appropriate boundary conditions. The analytical solution for band-to-band generation is obtained using Kane’s formula and used to calculate the drain current. It is observed that the proposed device structure provides better performance in terms both higher ON current as 10− 3 A/µm and reduced OFF current as 10− 12 A/µm. The obtained ON-OFF ratio with the proposed device structure is 109. The performance of the proposed structure is confirmed by the comparison of the results of analytics with the simulation results obtained using TCAD. The excellent correlation of the modelled results with the simulation results validates the proposed models’ accuracy.